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| FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET June 2006 FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET Features Q1: N-Channel 7.0A, 30V RDS(on) = 0.030 @ VGS = 10V RDS(on) = 0.044 @ VGS = 4.5V Q2: P-Channel -5A, -30V RDS(on) = 0.052 @ VGS = -10V RDS(on) = 0.080 @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D1 D1 D2 D2 5 6 Q2 4 3 SO-8 Pin 1 S1 G1 G2 S2 7 8 Q1 2 1 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG RJA RJC Operating and Storage Junction Temperature Range (Note 1a) Parameter Q1 30 20 7 20 2 1.6 1 0.9 -55 to +150 Q2 -30 20 -5 -20 Units V V A W C C/W C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 Package Marking and Ordering Information Device Marking FDS8962C Device FDS8962C Reel Size 13" Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDS8962C Rev. A1 FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125C VGS = 4.5 V, ID = 6 A VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125C VGS = -4.5 V, ID = -4 A ID(on) gFS On-State Drain Current Forward Transconductance VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q2 VDS = -15 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 Q2 All All 30 -30 25 -23 1 -1 100 -100 V mV/C A nA nA Parameter Test Conditions Type Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Q1 Q2 Q1 Q2 Q1 1 -1 1.9 -1.7 -4.5 4.5 21 29 26 42 57 65 20 -20 25 10 30 46 44 52 78 80 A S 3 -3 V mV/C m Q2 Q1 Q2 Q1 Q2 Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 575 528 145 132 65 70 2.1 6.0 pF pF pF VGS = 15 mV, f = 1.0 MHz Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 7 5 13 23 14 3 9 10.7 9.6 1.7 2.2 2.1 1.7 16 14 10 24 37 25 6 17 26 13 ns ns ns ns nC nC nC FDS8962C Rev. A1 2 www.fairchildsemi.com FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted (Continued) Symbol IS VSD trr Qrr Parameter Test Conditions Type Q1 Q2 Min Typ Max 1.3 -1.3 Units A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 0.75 -0.88 19 19 9 6 1.2 -1.2 Q1 IF = 7 A, diF/dt = 100 A/s Q2 IF = -5 A, diF/dt = 100 A/s Notes: Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125/W when mounted on a .02 in2 pad of 2 oz copper c) 135/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS8962C Rev. A1 3 www.fairchildsemi.com FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q1 (N-Channel) 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10.0V 4.0V 3.5V 2.2 ID , DRAIN CURRENT (A) 16 6.0V 4.5V 1.8 VGS = 3.5V 12 1.4 4.0 4.5V 5.0 6.0V 10.0V 8 3.0V 1 4 0 0 0.5 1 1.5 VDS , DRAIN-SOURCE VOLTAGE (V) 2 0.6 0 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 7A V GS = 10.0V ID = 3.5A 0.07 0.06 0.05 TA = 125C 1.4 1.2 1 0.04 0.03 TA = 25C 0.8 0.02 0.01 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 20 VDS = 5V Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V I D, DRAIN CURRENT (A) 16 10 1 0.1 0.01 0.001 TA = 125C 12 TA = 125C -55C 25C 8 25C -55C 4 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 VSD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8962C Rev. A1 4 www.fairchildsemi.com FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q1 (N-Channel) 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7A VDS = 10V 20V 800 f = 1MHz VGS = 0 V 8 15V CAPACITANCE (pF) 600 Ciss 400 6 4 Coss 200 2 Crss 0 0 2 4 6 8 10 12 Qg , GATE CHARGE (nC) 0 0 5 10 15 VDS , DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 135C/W TA = 25C ID, DRAIN CURRENT (A) 40 10 30 1 DC VGS = 10V SINGLE PULSE RJA = 135C/W TA = 25C 10s 20 0.1 10 0.01 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 10 t1 , TIME (sec) 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDS8962C Rev. A1 5 www.fairchildsemi.com FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) 30 VGS = -10V -6.0V -5.0V 2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 1.8 VGS =-4.0V 1.6 20 -4.5V -4.5V 1.4 1.2 1 0.8 -4.0V -5.0V -6.0V -7.0V -8.0V -10V 10 -3.5V -3.0V 0 0 1 2 3 4 5 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 6 12 18 24 30 -ID , DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON) , ON-RESISTANCE (OHM) ID = -5A V GS = -10V 0.25 ID = -2.5A 1.4 0.2 1.2 0.15 TA = 125C 1 0.1 TA = 25C 0.8 0.05 0.6 -50 0 -25 0 25 50 75 100 125 150 2 4 6 8 10 TJ , JUNCTION TEMPERATURE (C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 15 VDS = -5V TA = -55 C 125 oC o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 25 oC -IS, REVERSE DRAIN CURRENT (A) V GS =0V -ID, DRAIN CURRENT (A) 12 10 T A = 125 o C 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 25o C -55 o C 9 6 3 0 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS8962C Rev. A1 6 www.fairchildsemi.com FDS8962C Dual N & P-Channel PowerTrench(R) MOSFET Typical Characteristics: Q2 (P-Channel) 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -5A VDS = -5V -15V -10V 800 700 600 f = 1 MHz VGS = 0 V 8 CAPACITANCE (pF) Ciss 6 500 400 300 4 Coss 200 100 2 Crss 0 5 10 15 20 25 30 0 0 2 4 6 8 10 Q g, GATE CHARGE (nC) 0 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. P(pk), PEAK TRANSIENT POWER (W) 100 100s Figure 18. Capacitance Characteristics. 50 SINGLE PULSE RJA = 125C/W TA = 25C -ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 10ms 100ms 1ms 40 30 1 VGS = -10V SINGLE PULSE RJA = 125C/W TA = 25C 1s 10s DC 20 0.1 10 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 135C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS8962C Rev. A1 7 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) FASTrTM ActiveArrayTM FPSTM BottomlessTM FRFETTM Build it NowTM GlobalOptoisolatorTM CoolFETTM GTOTM CROSSVOLTTM HiSeCTM DOMETM I2CTM EcoSPARKTM i-LoTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I19 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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